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PD - 91711B
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level IRHG7214 100K Rads (Si) IRHG3214 300K Rads (Si) IRHG4214 600K Rads (Si) IRHG8214 1000K Rads (Si) R DS(on) 2.25 2.25 2.25 2.25
IRHG7214 250V,QUAD N-CHANNEL
RAD Hard HEXFET TECHNOLOGY
(R)
ID 0.5A 0.5A 0.5A 0.5A
MO-036AB
International Rectifiers RADHard HEXFET(R) technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
! ! ! ! ! ! ! ! !
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.5 0.3 2.0 1.4 0.011 20 75 5.5 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 (1.6mm from case for 10s) 1.5 (Typical )
g
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IRHG7214
Pre-Irradiation
@ Tj = 25C (Unless Otherwise Specified) Min Typ Max Units
0.29 10 2.25 2.4 4.0 25 250 100 -100 15 2.5 4.5 20 25 50 50 V V/C V S( ) A
Electrical Characteristics
Parameter
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 0.3A VGS = 12V, ID = 0.5A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 0.3A VDS= 200V ,VGS=0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 0.5A VDS = 125V VDD =125V, ID = 0.5A VGS =12V, RG = 7.5
BVDSS Drain-to-Source Breakdown Voltage 250 BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage 2.0 g fs Forward Transconductance 0.47 IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns nH
Measur ed from Drain lead (6mm /0.25in from package) to Source lead (6mm /0.25in. from
Package) with Source wires internally bonded from Source Pin to Drain Pad
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance

280 67 16

pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
0.5 2.0 1.7 250 370
Test Conditions
A
V nS C Tj = 25C, IS = 0.5A, VGS = 0V Tj = 25C, IF = 0.5A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max Units
17 90
C/W
Test Conditions
Soldered to a Copper clad PB board
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHG7214
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
Min 250 2.0
100K Rads(Si)
Max
300 - 1000K Rads (Si)
Min
Max
Units Units V nA A V
Test Conditions
BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" On-State Resistance (TO-3) Static Drain-to-Source" On-State Resistance (MO-036AB) Diode Forward Voltage"
4.0 100 -100 25 2.25 2.25 1.70
250 1.25
4.5 100 -100 50 3.0 3.0 1.70
VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=200V, VGS =0V VGS = 12V, ID =0.3A VGS = 12V, ID =0.3A VGS = 0V, IS = 0.5A
1. Part numbers IRHG7214 2. Part number IRHG3214, IRHG4214 and IRHG8214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Cu Br LET Energy MeV/(mg/cm )) (MeV) 28.0 285 36.8 305 Range VDS(V) (m) @VGS=0V @VGS=-5V@ GS=-10V@ GS=-15V @VGS=-20V =-5V@V =-10V@V @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V 43 250 250 250 250 250 39 250 250 250 225 210
300 250 200 150 100 50 0 0 -5 -10 VGS -15 -20 Cu Br VDS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHG7214
Pre-Irradiation
10
10
I D , Drain-to-Source Current (A)
1
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
1
4.5V
0.1
4.5V
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
I D , Drain-to-Source Current (A)
TJ = 25 C TJ = 150 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 0.5A
2.0
1.5
1
1.0
0.5
0.1
V DS = 50V 20s PULSE WIDTH 4 6 8 10
0.0 -60 -40 -20
VGS = 12V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHG7214
600
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
20
ID = 0.5A
16
V DS= 200V V DS= 125V V DS= 50V
C, Capacitance (pF)
400
Ciss
12
200
Coss Crss
8
4
0
0
FOR TEST CIRCUIT SEE FIGURE 13
0 3 6 10 13 16
1
10
100
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100us 1 1ms
1
TJ = 150 C
10ms 0.1
TJ = 25 C
0.1 0.4
V GS = 0 V
0.6 0.8 1.0 1.2
0.01
TC = 25 C TJ = 150 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHG7214
Pre-Irradiation
0.6
VDS VGS RG
RD
0.5
D.U.T.
+
ID , Drain Current (A)
0.4
-VDD
VGS
0.3
Pulse Width 1 s Duty Factor 0.1 %
0.2
Fig 10a. Switching Time Test Circuit
VDS 90%
0.1
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJC )
10
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
1
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHG7214
EAS , Single Pulse Avalanche Energy (mJ)
200
15V
150
ID 0.22A 0.32A BOTTOM 0.5A TOP
VDS
L
DRIVER
100
RG
D.U.T
IAS tp
+ - VDD
A
V/5 20V
0.01
50
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V(BR)DSS tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHG7214
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 50V, starting TJ = 25C, L=600mH Peak IL = 0.5A, VGS =12V ISD 0.5A, di/dt 150A/s, VDD 250V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with V DS Bias. 200 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01
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